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标题: S3F94C4嵌入式闪存操作之疑问 [打印本页]

作者: 张衍波 时间: 2015-10-27 17:56
标题: S3F94C4嵌入式闪存操作之疑问
__no_init uchar read_datum@0x10;

//擦除EEPROM不能进中断,擦除flash时，CPU至少停止4ms
void EraseFlash(uint address)
{
      FMUSR=0xa5;
      //asm("LD FMSECH,R14");
      //asm("CLR  FMSECL");
  FMSECH=address>>8;
  FMSECL=0;
      FMCON=0XA1;
//       while(FMCON&0X01);       //等待擦除完成
      FMUSR=0X00;
}

//start_address工作寄存器为R14，R15;datum工作寄存器的R12,R13;
//number的工作寄存器为R11。
void FlashWritBytes(uint start_address,uchar *datum,uchar number)
{
  asm("PUSH R9");
      asm("LD  FMUSR,#0A5H");
  FMCON=0X50;
      //asm("LD FMSECH,R14");
      //asm("CLR  FMSECL");
  FMSECH=start_address>>8;
  FMSECL=0;
      for(;number>0;number--)
      {
            asm("LD R9,@R13");
            asm("LDC @RR14,R9");
            asm("INC R15");
            asm("INC R13");
  }
      asm("LD  FMUSR,#00H");
      asm("POP R9");
}

uchar FlashReadByte(uint address)
{
  asm("PUSH R9");
      asm("LDC R9,@RR14");
  asm("LD 0X10,R9");
      asm("POP R9");
      return(read_datum);
}转载

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